KZT849(V2) データシートの表示（PDF） - KEXIN Industrial

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KZT849
(Rev.:V2)

NPN Transistors

KEXIN Industrial 

SMD Type

Transistors

NPN Transistors

FZT849 (KZT849)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector- base breakdown voltage

VCBO Ic= 100 μA， IE= 0

80

Collector- emitter breakdown voltage

VCER Ic= 1 uA， RB ≤ 1KΩ

80

Collector- emitter breakdown voltage

VCEO Ic= 10 mA， IB= 0

30

Emitter - base breakdown voltage

VEBO IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 70 V , IE= 0

VCB= 70 V , IE= 0 , Ta = 100℃

Collector-emitter cut-off current ( R ≤ 1KΩ)

ICER

VCB= 70 V , IE= 0

VCB= 70 V , IE= 0 , Ta = 100℃

Emitter cut-off current

IEBO VEB= 6V , IC=0

V

0.05 nA

1 uA

50 nA

1 uA

10 nA

IC=500mA, IB=20mA

(Note.1)

50

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter turn-on voltage

IC=1 A, IB=20mA

VCE(sat)

IC=2 A, IB=20mA

(Note.1)

(Note.1)

IC=6.5 A, IB=300mA

(Note.1)

VBE(sat) IC=6.5 A, IB=300mA

(Note.1)

VBE(on) VCE= 1V, IC= 6.5A (Note.1)

110

mV

214

350

1.2

V

1.13

DC current gain

(Note.1)

hFE(1)

hFE(2)

hFE(3)

hFE(4)

VCE= 1V, IC= 10mA

VCE= 1V, IC= 1 A

VCE= 1V, IC= 7 A

VCE= 2V, IC= 20 A

100

100

300

100

30

Switching Times

Collector output capacitance

Transition frequency

ton

IC=1 A, VCC=10V

toff

IB1=100mA, IB2=100mA

Cob VCB= 10V, f=1MHz (Note.1)

fT VCE= 10V, IC= 100mA,f=50MHz

45

ns

630

75

pF

100

MHz

Note.1:Pulse Width=300us. Duty cycle ≤2%

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