BF620 データシートの表示（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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BF620

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Low current (max. 50mA)

• High voltage (max. 300V).

• Video output stages.

Marking: DC

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol Value

Unit

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

50

mA

Collector Power dissipation

Junction Temperature

Storage Temperature

PC

500

mW

TJ

150

Tstg -55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Symbol

unless otherwise specified)

Test conditions

Collector-base breakdown voltage

VCBO

IC=100μA, IE=0

Collector-emitter breakdown voltage

VCEO

IC=1mA, IB=0

Emitter-base breakdown voltage

VEBO

IE=100μA, IC=0

Collector cut-off current

ICBO VCB=200V, IE=0

Emitter cut-off current

IEBO

VEB=5V, IC=0

DC current gain

hFE

VCE=20V, IC=25mA

Collector-emitter saturation voltage

VCE(sat) IC=30mA, IB=5mA

Transition frequency

fT

VCE=10V, IC=10mA, f=100MHz

BF620 (NPN)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

Min Typ Max Unit

300

V

300

V

5

V

10

nA

50

nA

50

0.6

V

60

MHz

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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