2SD1277 データシートの表示（PDF） - Inchange Semiconductor
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2SD1277 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1277
2SD1277A
IC=30mA , IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=8mA
VBEsat
ICBO
Base-emitter saturation voltage
IC=4A ;IB=8mA
Collector
cut-off current
2SD1277 VCB=60V ;IE=0
2SD1277A VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=3V
hFE-2
DC current gain
IC=4A ; VCE=3V
fT
Transition frequency
Switching times
IC=0.5A; VCE=10V;f=1MHz
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN TYP. MAX UNIT
60
V
80
1.5
V
2
V
0.1
mA
500
2000
20
2
mA
10000
MHz
0.5
μs
4.0
μs
1.0
μs
2
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