D1409 データシートの表示（PDF） - Inchange Semiconductor
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D1409 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1409
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage
IC=4A ;IB=0.04A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.04A
VECF
Emitter-collector diode forward voltage IE=4A; IB=0
ICBO
Collector cut-off current
VCB=600V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
COB
Collector output capacitance
f=1MHz ; VCB=50V;IE=0
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=0.04A
VCC=100V ,RL=25Ω
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
3.0
V
0.5 mA
3
mA
600
100
35
pF
1
μs
8
μs
5
μs
2
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