MPSA43 データシートの表示（PDF） - ON Semiconductor
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MPSA43 Datasheet PDF : 6 Pages
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MPSA42, MPSA43
MPSA42 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSA43
200
MPSA42
300
Collector −Base Voltage
VCBO
Vdc
MPSA43
200
MPSA42
300
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0
Vdc
500
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.5
12
−55 to
+150
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Symbol
RqJA
Max
200
Unit
°C/mW
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/mW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
1
23
TO−92
(TO−226AA)
CASE 29−11
MPS
A4x
AYWWG
G
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 3
Publication Order Number:
MPSA42/D
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