MPSA43 データシートの表示（PDF） - Transys Electronics Limited

部品番号

コンポーネント説明

メーカー

MPSA43

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Transys Electronics Limited 

Transys

Electronics

LIMITED

NPN EPITAXIAL PLANAR SILICON TRANSISTORS

MPSA 42

MPSA 43

TO-92

CBE

EBC

High Voltage Transistors.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

MPSA42 MPSA43

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @ Ta=25 degC

Derate above 25 deg C

Power Dissipation @ Tc=25 degC

Derate above 25 deg C

Operating And Storage Junction

Temperature Range

VCEO

VCBO

VEBO

IC

PD

PD

Tj, Tstg

300

200

300

200

6

500

625

5

1.5

12

-55 to +150

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

83.3

Junction to Ambient

Rth(j-a)

200

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MPSA42

Collector -Emitter Voltage

VCEO

IC=1mA,IB=0

>300

Collector -Base Voltage

VCBO

IC=100uA.IE=0

>300

Emitter-Base Voltage

VEBO

IE=100uA, IC=0

>6.0

Collector-Cut off Current

ICBO

VCB=200V, IE=0

<100

VCB=160V, IE=0

-

Emitter-Cut off Current

IEBO

VEB=6V, IC=0

<100

VEB=4V, IC=0

-

DC Current Gain

hFE*

IC=1mA,VCE=10V

>25

IC=10mA,VCE=10V

>40

IC=30mA,VCE=10V

>40

Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA

<0.5

Base Emitter Saturation Voltage

VBE(Sat) * IC=20mA,IB=2mA

<0.9

MPSA43

>200

>200

>6.0

-

<100

-

<100

>25

>40

>40

<0.4

<0.9

DYNAMIC CHARACTERISTICS

Current Gain-Bandwidth Product

ft

Collector Base Capacitance

Ccb

*Pulse Test: Pulse Width=300us, Duty Cycle=2%

IC=10mA, VCE=20V

f=100MHz

VCB=20V, IE=0

f=1MHz

.

>50

>50

<3.0

<4,0

UNIT

V

V

V

mA

mW

mW./deg C

W

mW./deg C

deg C

deg C/W

deg C/W

UNIT

V

V

V

nA

nA

nA

nA

V

V

MHz

pF

Share Link: