MPSA43 データシートの表示（PDF） - Weitron Technology

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MPSA43

High-Voltage NPN Transistors

Weitron Technology 

High-Voltage NPN Transistors

P b Lead(Pb)-Free

ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Device Dissipation TA=25°C

Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

VEBO

IC

PD

Tj

Tstg

MPSA43

1. EMITTER

2. BASE

3. COLLECTOR

1

2

3

TO-92

Value

200

200

6.0

500

0.625

150

-55 to +150

Unit

Vdc

Vdc

Vdc

mAdc

W

°C

°C

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)

Collector Cutoff Current (VCB= 160Vdc, IE=0)

Emitter Cutoff Current (VEB= 4.0Vdc, IC=0)

Symbol Min

V(BR)CEO 200

V(BR)CBO 200

V(BR)EBO 6.0

ICBO

-

IEBO

-

Max

Unit

-

Vdc

-

Vdc

-

Vdc

0.1

µA

0.1

µA

WEITRON

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http://www.weitron.com.tw

29-Mar-06

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