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GBU8A データシートの表示(PDF) - Mospec Semiconductor

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GBU8A
Mospec
Mospec Semiconductor Mospec
GBU8A Datasheet PDF : 2 Pages
1 2
MOSPEC
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
MECHANICAL DATA
Case: Molded Plastic
Epoxy: UL94V-O rate flame retardant
TerminalsPlated Leads Solderable
Per MIL-STD-202 Method 208
PolarityAs Marking on Body
Mounting Position: Any
Weight4.0 gram (approx.)
Marking:Type Number
GBU8A THRU GBU8K
GBU
Dim Min
Max
A 21.80 22.30
B 18.30 18.80
C
7.40 7.90
D
3.50 4.10
E
1.52 2.03
G
2.16 2.54
H
4.83 5.33
J
1.65 2.16
K
1.02 1.27
L
0.76 1.02
M
3.30 3.56
N 17.50 18.00
P
0.46 0.56
Unit :mm
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25ambient temperature unless otherwise specified
* Single phase,half wave. 60Hz, resistive or inductive load.
* For capacitive load derate current by 20 %
Characteristic
Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100
200
400
600
800
V
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectifier Forward Current @ TC=100
@ TA=45
Non-Repetitive Peak Surge Current
8.3 ms Single half sine-wave superimposed on
rated load
Forward Voltage (per element) ( IF =4.0 Amp)
IO(AV)
IFSM
VFM
Peak Reverse Current
( Rated DC Voltage, TC = 25)
IR
( Rated DC Voltage, TC = 100)
I2 t Rating for Fusing( t<8.35MS)
I2t
Typical Thermal Resistance (per leg)(note 1)
Rθ jA
Typical Thermal Resistance (per leg)(note 2)
Rθ jc
Operating and Storage Temperature Range
TJ , Tstg
70
140
280
420
560
V
8.0
6.0
A
200
A
1.0
V
5.0
uA
500
166
A2s
18
k/W
3.0
k/W
-65 to +150
Note: 1.Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length with 12 mm2 copper pads.
2.Thermal resistance junction to case, mounted on 7.5×7.5×0.3 cm thick AL plate.

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