BAS40(1999) データシートの表示（PDF） - Infineon Technologies

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BAS40
(Rev.:1999)

HiRel Silicon Schottky Diode

Infineon Technologies 

BAS40

Maximum Ratings

Parameter

Reverse Voltage

Forward Current

Surge Forward Current 1)

Power Dissipation 2)

Operating Temperature Range

Storage Temperature Range

Soldering Temperature 3)

Junction Temperature

Thermal Resistance Junction-Case

Symbol

VR

IF

IFSM

Ptot

Top

Tstg

Tsol

Tj

Rth(j-c)

Values

Unit

40

V

120

mA

170

mA

250

mW

-55 to +150

°C

-55 to +150

°C

+250

°C

150

°C

100

K/W

Electrical Characteristics

at TA=25°C; unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ.

max.

DC Characteristics

Reverse Current 1

VR=40V

Reverse Current 2

VR=30V

Forward Voltage 1

IF1=1mA

Forward Voltage 2

IF2=10mA

Forward Voltage 3

IF3=40mA

Differential Forward Resistance 4)

IF=10mA, IF=15mA

IR1

-

-

10 µA

IR2

-

-

1

µA

VF1

0,29 0,33

0,39 V

VF2

0,42 0,45

0,54 V

VF3

0,68 0,7

0,85 V

RFD

7,5

10

11,5 Ω

AC Characteristics

Total Capacitance

CT

2,2 2,9

5,0 pF

VR=0V; f=1MHz

Notes.:

1.) t ≤ 10ms, Duty Cycle=10%

2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required.

3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.

∆VF

4.)

RFD=----------------

5x10-3 A

Semiconductor Group

2 of 4

Draft B, September 99

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