RF2480 データシートの表示（PDF） - RF Micro Devices
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RF2480 Datasheet PDF : 8 Pages
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RF2480
Parameter
RF Output (~900MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
Sideband Suppression
Output Impedance
Broadband Noise Floor
RF Output (~2000MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
Sideband Suppression
Output Impedance
Broadband Noise Floor
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
Power Supply
Voltage
Current
Specification
Min.
Typ.
Max.
0
+4
-11
50
35
50
35
13 - j : 25
-153.0
-7
-3
-17
50
35
50
40
58 - j11
-158.0
100
50
2.8
1.0
1.2
5
4.5
6.0
50
25
Unit
Condition
dBm
dBm
dB
dB
dB
dB
dBm/Hz
dBm
dBm
dB
dB
dB
dB
dBm/Hz
LO=880MHz, -5dBm; SSB
I&Q Amplitude=2VPP
I&Q Amplitude=0.325VPP
T=25°C; POUT=-11dBm (meets CDMA base
station requirements); optimized I,Q DC offsets
Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
POUT = -11 dBm)
T=25°C; POUT=-11dBm; optimized I,Q DC off-
sets
Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
POUT = -11 dBm)
At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
LO=2000MHz, -5dBm; SSB
I&Q Amplitude=2VPP
I&Q Amplitude=0.325VPP
T=25°C; POUT=-17dBm; optimized I,Q DC off-
sets
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT=-17dBm
T=25°C; POUT=-17dBm; optimized I,Q DC off-
sets
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT=-17dBm
At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
ns
k
V
Threshold voltage
V
Threshold voltage
V
Specifications
V
Operating Limits
mA
Operating
A
Power Down
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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