2N6490(V2) データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2N6490
(Rev.:V2)

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2N6489 2N6490 2N6491

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6489

2N6490 IC=-0.2A ;IB=0

2N6491

VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A

VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-5A

VBE-1

Base-emitter on voltage

IC=-5A ; VCE=-4V

VBE-2

ICEX

ICEO

Base-emitter on voltage

2N6489

Collector cut-off current

VBE=-1.5V

2N6490

2N6491

2N6489

IC=-15A ; VCE=-4V

VCE=-45V;

VCE=-40V;TC=150℃

VCE=-65V;

VCE=-60V;TC=150℃

VCE=-85V;

VCE=-80V;TC=150℃

VCE=-20V;IB=0

Collector cut-off current 2N6490 VCE=-30V;IB=0

2N6491 VCE=-40V;IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-5A ; VCE=-4V

hFE-2

DC current gain

IC=-15A ; VCE=-4V

MIN TYP. MAX UNIT

-40

-60

V

-80

-1.3

V

-3.5

V

-1.3

V

-3.5

V

-0.5

-5.0

-0.5

-5.0

mA

-0.5

-5.0

-1.0 mA

-1.0 mA

20

150

5

2

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