BCW68 データシートの表示（PDF） - Infineon Technologies
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BCW68 Datasheet PDF : 8 Pages
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BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCW67
IC = 10 mA, IB = 0 , BCW68
V(BR)CEO
32
-
-
45
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BCW67
IC = 10 µA, IE = 0 , BCW68
V(BR)CBO
45
-
-
60
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector-base cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
VCB = 32 V, IE = 0 , TA = 150 °C; BCW67
VCB = 45 V, IE = 0 , TA = 150 °C; BCW68
ICBO
-
- 0.02
-
- 0.02
-
-
20
-
-
20
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 µA, VCE = 10 V, hFE-grp.A/F
IC = 100 µA, VCE = 10 V, hFE-grp.B/G
IC = 100 µA, VCE = 10 V, hFE-grp.C/H
IC = 10 mA, VCE = 1 V, hFE-grp.A/F
IC = 10 mA, VCE = 1 V, hFE-grp.B/G
IC = 10 mA, VCE = 1 V, hFE-grp.C/H
IC = 100 mA, VCE = 1 V, hFE-grp.A/F
IC = 100 mA, VCE = 1 V, hFE-grp.B/G
IC = 100 mA, VCE = 1 V, hFE-grp.C/H
IC = 500 mA, VCE = 2 V, hFE-grp.A/F
IC = 500 mA, VCE = 2 V, hFE-grp.B/G
IC = 500 mA, VCE = 2 V, hFE-grp.C/H
IEBO
hFE
-
-
20
35
-
-
50
-
-
80
-
-
75
-
-
120 -
-
180 -
-
100 160 250
160 250 400
250 350 630
35
-
-
60
-
-
100 -
-
Unit
V
µA
nA
-
3
2011-09-15
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