BCW68 データシートの表示（PDF） - Infineon Technologies

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BCW68

PNP Silicon AF Transistors

Infineon Technologies 

DC Electrical Characteristics

Parameter

Characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

Base emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

1Pulse test: t < 300µs; D < 2%

BCW67, BCW68

Symbol

Values

Unit

min. typ. max.

VCEsat

V

-

-

0.3

-

-

0.7

VBEsat

-

- 1.25

-

-

2

fT

- 200 - MHz

Ccb

-

6

- pF

Ceb

-

60

-

4

2011-09-15

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