BCW67 データシートの表示（PDF） - Galaxy Semi-Conductor
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BCW67 Datasheet PDF : 4 Pages
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Production specification
PNP General Purpose Amplifier
BCW67/BCW68
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
IEBO
A/F
B/G
hFE
C/H
A/F
B/G
hFE
C/H
A/F
B/G
hFE
C/H
A/F
B/G
hFE
C/H
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
IC=-10μA IE=0 BCW67 -45
BCW68 -60
IC=-10mA IB=0 BCW67 -32
BCW68 -45
IE=-10μA IC=0
-5
VCB=-32V IE=0 BCW67
VCB=-45V IE=0 BCW68
VEB=-4V IC=0
35
VCE=-10V IC=-0.1mA
50
80
75
VCE=-1V IC=-10mA
120
180
100
VCE=-1V IC=-100mA
160
250
35
VCE=-2V IC=-500mA
60
100
IC=-100mA IB=-10mA
IC=-500mA IB=-50mA
IC=-100mA IB=-10mA
IC=-500mA IB=-50mA
VCE=-5V IC=-50mA
f=20MHz
160
250
350
200
MAX
-20
-20
-20
250
400
630
-0.3
-0.7
-1.25
-2
UNIT
V
V
V
nA
nA
V
V
V
MHz
C161
Rev.A
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