3KP(2016) データシートの表示（PDF） - Shanghai Semitech Semiconductor Co., Ltd
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3KP
(Rev.:2016)
(Rev.:2016)
Shanghai Semitech Semiconductor Co., Ltd
3KP Datasheet PDF : 4 Pages
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4
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
3KP Series
3000W Axial Leaded
Transient Voltage Suppressors
.
Features
l Peak power dissipation 3000W @10 x 1000 us Pulse
l Low profile package.
l Excellent clamping capability.
l Glass passivated junction.
l Fast response time: typically less than 1ps from 0 Volts to BV min
l Typical IR less than 2uA when VBR min above 12V.
l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
l ESD protection of data lines in accordance with IEC 61000-4-2
l EFT protection of data lines in accordance with IEC 61000-4-4
l Halogen free and RoHS compliant
l Lead-free finish
R-6
Bi-directional
Cathode
Anode
Uni-directional
Mechanical Characteristics
l CASE: R-6 Molded Plastic
l Mounting Position: Any
l Polarity: by cathode band denotes uni-directional
device, none cathode band denotes bi-directional
device.
l Terminal: Solder plated
REF.
A
B
C
D
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
25.4
---
1.000
---
8.6
9.5
0.34
0.375
1.2
1.3
0.048
0.052
8.6
9.5
0.340
0.375
Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, FIG.1)
Power Dissipation on Infinite Heat Sink at TL=75°C
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
PPPM
PD
IPPM
IFSM
TJ
TSTG
Value
Min 3000
7.0
See Table 1
300
-55 to 150
-55 to 150
Units
W
W
A
A
°C
°C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2.
2. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only.
Rev. 2.0, 23-Nov.-16
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