TIP47 データシートの表示（PDF） - Power Innovations
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TIP47 Datasheet PDF : 7 Pages
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TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 350 V
VCE = 400 V
VCE = 450 V
VCE = 500 V
VCE = 150 V
VCE = 200 V
VCE = 250 V
VCE = 300 V
VEB = 5 V
VCE = 10 V
VCE = 10 V
IB = 0.2 A
VCE = 10 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IB = 0
IB = 0
IC = 0
IC = 0.3 A
IC = 1 A
IC = 1 A
IC = 1 A
IC = 0.2 A
IC = 0.2 A
TIP47
TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50
250
300
350
400
1
1
1
1
1
1
1
1
1
30
150
(see Notes 5 and 6)
10
(see Notes 5 and 6)
1
(see Notes 5 and 6)
1.5
f = 1 kHz
25
f = 2 MHz
5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
ton
Turn on time
toff
Turn off time
IC = 1 A
VBE(off) = -5 V
IB(on) = 0.1 A
RL = 200 Ω
IB(off) = -0.1 A
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
0.2
2
UNIT
µs
µs
PRODUCT INFORMATION
2
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