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TIP47 データシートの表示(PDF) - New Jersey Semiconductor

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TIP47
NJSEMI
New Jersey Semiconductor NJSEMI
TIP47 Datasheet PDF : 2 Pages
1 2
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
(lc = 30 mAdc, IB = 0)
TIP47 VCEO(sus)
250
TIP48
300
TIP50
400
-
Vdc
-
-
Collector Cutoff Current
(VCE = 150Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
'CEO
TIP47
TIP48
TIP50
mAdc
_
1.0
_
1.0
-
1.0
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
(VCE = 400 Vdc, VBE = 0)
(VCE = 500 Vdc, VBE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, lc = 0)
ICES
TIP47
TIP48
TIP50
IEBO
mAdc
_
1.0
_
1.0
-
1.0
-
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(lc = 0.3 Adc, VCE = 10 Vdc)
(lc = 1.0 Adc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(lc = 1 .0 Adc, IB = 0.2 Adc)
HFE
-
30
150
10
-
VCE(sat)
-
1.0
Vdc
Base-Emitter On Voltage
(lc = 1.0 Adc, VCE = 10 Vdc)
vBE(on)
-
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 0.1 Adc, VCE= 10 Vdc, f = 2.0 MHz)
fr
10
-
MHz
Small-Signal Current Gain
(lc = 0.2 Adc, VCE = 10 Vdc,f = 1.0kHz)
1. Pulse Test: Pulse width < 300 us, Duty Cycle <2.0%.
hfe
25
-
-

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