MPSA26 データシートの表示（PDF） - Central Semiconductor
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MPSA26 Datasheet PDF : 3 Pages
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MPSA26
MPSA27
SILICON
NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA26 and
MPSA27 are silicon NPN Darlington transistors
manufactured by the epitaxial planar process and
designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=40V
ICBO
VCB=50V
ICES
VCE=40V
ICES
VCE=50V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
VCE(SAT) IC=100mA, IB=100μA
VBE(ON)
VCE=5.0V, IC=100mA
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=100mA
fT
VCE=5.0V, IC=10mA, f=100MHz
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
ΘJA
MPSA26
50
MPSA27
60
50
60
10
500
625
-65 to +150
200
MPSA26
MIN MAX
-
100
-
-
-
500
-
-
-
100
50
-
50
-
-
1.5
-
2.0
10,000 -
10,000 -
125
-
MPSA27
MIN MAX
-
-
-
100
-
-
-
500
-
100
60
-
60
-
-
1.5
-
2.0
10,000 -
10,000 -
125
-
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
nA
nA
V
V
V
V
MHz
R0 (18-March 2014)
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