MMBT4403 データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED

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MMBT4403

Plastic-Encapsulate Transistors

MAKO SEMICONDUCTOR CO.,LIMITED 

Plastic-Encapsulate Transistors

FEATURES

Switching transistor)

MMBT4403 (PNP)

Marking:2T

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

-40

VCEO

-40

VEBO

-5

IC

600

PC

300

TJ

150

Tstg

-55 to +150

Unit

V

V

V

mA

mW

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

VCBO

IC=-100μA , IE=0

Collector-emitter breakdown voltage

VCEO IC= -1mA , IB=0

Emitter-base breakdown voltage

VEBO IE=-100μA, IC=0

Collector cut-off current

ICBO VCB=-35V, IE=0

Collector cut-off current

ICEO VCE=-35 V, IB=0

Emitter cut-off current

IEBO VEB=-4V,IC=0

Min Max Unit

-40

V

-40

V

-5

V

-0.1 μA

-0.1 μA

-0.1 μA

DC current gain

hFE VCE=-2V, IC= -150mA

100

300

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat) IC=-150mA, IB=-15mA

-0.4

V

VBE(sat) IC=- 150mA, IB=-15mA

-0.95

V

VCE= -10V, IC= -20mA

fT

200

f = 100MHz

MHz

MAKO Semiconductor Co., Limited 4008-378-873

http://www.makosemi.hk/

Page:P2-P1

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