BSR33 データシートの表示（PDF） - Philips Electronics
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BSR33 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BSR30; BSR31; BSR33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BSR30
BSR31; BSR33
DC current gain
BSR30
BSR31; BSR33
DC current gain
BSR30
BSR31; BSR33
collector-emitter saturation
voltage
base-emitter saturation voltage
fT
transition frequency
CONDITIONS
IE = 0; VCB = −60 V
IE = 0; VCB = −60 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −100 µA; VCE = −5 V; note 1
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IC = −50 mA; VCE = −10 V;
f = 100 MHz
Note
1. Pulse test: tp = 300 µs; δ < 0.01.
MIN.
−
−
−
MAX.
−100
−50
−100
UNIT
nA
µA
nA
10
−
30
−
40
120
100
300
30
−
50
−
−
−0.25 V
−
−0.5
V
−
−1
V
−
−1.2
V
100
−
MHz
1999 Apr 26
3
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