BSR33 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

部品番号

コンポーネント説明

メーカー

BSR33

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

BSR33 TRANSISTOR (PNP)

FEATURES

z Low Voltage

z High Current

z Complement to BSR43

AAPLICATIONS

z Medium Power Transistor

MARKING:BR4

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-90

-80

-5

-1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)*

hFE(2)*

hFE(3)*

VCE(sat)*

VBE(sat)*

fT

Test conditions

IC=-100µA,IE=0

IC=-1mA,IB=0

IE=-100µA,IC=0

VCB=-60V,IE=0

VEB=-5V,IC=0

VCE=-5V, IC=0.1mA

VCE=-5V, IC=-100mA

VCE=-5V, IC=-500mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

VCE=-10V,IC=-50mA, f=100MHz

Min Typ Max

-90

-80

-5

-100

-100

30

100

300

50

-0.25

-0.5

-1

-1.2

100

Unit

V

V

V

nA

nA

V

V

V

V

MHz

www.cj-elec.com

1

C,Nov,2015

Share Link: