HSB276S データシートの表示（PDF） - Renesas Electronics

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HSB276S

Silicon Schottky Barrier Diode for Detector and Mixer

Renesas Electronics 

HSB276S

Absolute Maximum Ratings

(Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Note: 1. Per one device

Symbol

VR

IO *1

Tj

Tstg

Value

Unit

3

V

30

mA

125

°C

–55 to +125

°C

Electrical Characteristics *１

(Ta = 25°C)

Item

Reverse voltage

Reverse current

Forward current

Capacitance

Capacitance deviation

ESD-Capability *2

Symbol Min

VR

3

IR

—

IF

35

C

—

∆C

—

—

30

Typ Max

——

— 50

——

— 0.9

— 0.1

——

Note: 1. Per one device

2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V

Unit

V

µA

mA

pF

pF

V

Test Condition

IR = 1 mA

VR = 0.5 V

VF = 0.5 V

VR = 0.5 V, f = 1 MHz

VR = 0.5 V, f = 1 MHz

C = 200 pF, R = 0 Ω , Both forward and

reverse direction 1 pulse.

Rev.1.00, Nov.10.2003, page 2 of 4

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