BC516 データシートの表示（PDF） - Semtech Electronics LTD.
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BC516 Datasheet PDF : 1 Pages
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BC516
PNP Silicon Darlington Transistor
Base
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 10 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 10 mA
Transition Frequency
at -VCE = 5 V, -IC = 10 mA
Collector
Emitter
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Symbol
Value
Unit
-VCBO
40
V
-VCEO
30
V
-VEBO
10
V
-IC
500
mA
-ICM
800
mA
Ptot
500
mW
Tj
150
OC
TS
- 55 to + 150
OC
Symbol
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
Min.
30000
-
-
40
30
10
-
-
-
125
Max.
-
100
100
-
-
-
1
1.5
1.4
-
Unit
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/01/2008
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