M1MA151AT1(2002) データシートの表示（PDF） - ON Semiconductor

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M1MA151AT1
(Rev.:2002)

Single Silicon Switching Diodes

ON Semiconductor 

M1MA151AT1, M1MA152AT1

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Condition

Min

Reverse Voltage Leakage Current M1MA151AT1

IR

M1MA152AT1

Forward Voltage

Reverse Breakdown Voltage

VF

M1MA151AT1

VR

M1MA152AT1

VR = 35 V

—

VR = 75 V

—

IF = 100 mA

—

IR = 100 mA

40

80

Diode Capacitance

Reverse Recovery Time (Figure 1)

2. trr Test Circuit

CD

VR = 0, f = 1.0 MHz

—

trr (Note 2) IF = 10 mA, VR = 6.0 V,

—

RL = 100 W, Irr = 0.1 IR

Max

Unit

0.1

mAdc

0.1

1.2

Vdc

—

Vdc

—

2.0

pF

3.0

ns

RECOVERY TIME EQUIVALENT TEST CIRCUIT

INPUT PULSE

tr

tp

RL

A

t

10%

90%

VR

tp = 2 ms

tr = 0.35 ns

Figure 1. Reverse Recovery Time Equivalent Test Circuit

OUTPUT PULSE

trr

IF

t

Irr = 0.1 IR

IF = 10 mA

VR = 6 V

RL = 100 Ω

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