M1MA151AT1 データシートの表示（PDF） - ON Semiconductor

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M1MA151AT1

Single Silicon Switching Diodes

ON Semiconductor 

M1MA151AT1, M1MA152AT1

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Reverse Voltage Leakage Current

M1MA151AT1

M1MA152AT1

Forward Voltage

Reverse Breakdown Voltage

M1MA151AT1

M1MA152AT1

Diode Capacitance

Reverse Recovery Time (Figure 1)

2. trr Test Circuit

Symbol

Condition

Min

IR

VR = 35 V

−

VR = 75 V

VF

IF = 100 mA

−

VR

IR = 100 mA

40

80

CD

VR = 0, f = 1.0 MHz

−

trr (Note 2) IF = 10 mA, VR = 6.0 V,

−

RL = 100 W, Irr = 0.1 IR

Max Unit

0.1

mAdc

1.2

Vdc

−

Vdc

2.0

pF

3.0

ns

RECOVERY TIME EQUIVALENT TEST CIRCUIT

INPUT PULSE

tr

tp

RL

A

t

10%

90%

VR

tp = 2 ms

tr = 0.35 ns

Figure 1. Reverse Recovery Time Equivalent Test Circuit

OUTPUT PULSE

trr

IF

t

Irr = 0.1 IR

IF = 10 mA

VR = 6 V

RL = 100 W

ORDERING INFORMATION

Device

Package

Shipping†

M1MA151AT1

SC−59

M1MA151AT1G

M1MA152AT1

SC−59

(Pb−Free)

SC−59

3000 /Tape & Reel

M1MA152AT1G

SC−59

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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