MBRB2060CT データシートの表示（PDF） - Inchange Semiconductor

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MBRB2060CT

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

MBRB2060CT

FEATURES

·Schottky barrier chip

·Low Power Loss,High Efficiency

·Guard ring for transient protection

·High Operating Junction Temperature

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·For use in high frequency rectifier of switching mode

power supplies,freewheeling diodes,DC-to-DC converters

or polarity protection application.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

VRMS

VR

IF(AV)

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

Average Rectified Forward Current

60

V

20

A

Nonrepetitive Peak Surge Current

IFSM

8.3ms single half sine-wave superimposed on 150

A

rated load conditions

TJ

Junction Temperature

-65~150 ℃

Tstg

Storage Temperature Range

-65~175 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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