HDB101G データシートの表示（PDF） - Shanghai Lunsure Electronic Tech
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HDB101G
Shanghai Lunsure Electronic Tech
HDB101G Datasheet PDF : 2 Pages
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HDB101G thru HDB107G
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
10W
NONINDUCTIVE NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM FORWARD
CURRENT DERATING CURVE
1.0
.06" (1.5mm)
PCB
Copper Pauls
.51" x .51"
0.5
(13mm x 13mm)
60Hz RESISTIVE OR
INDUCTIVE LOAD
0
20
40
60
80
100
120
140 150
AMBIENT TEMPERATURE. (oC)
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4- TYPICAL FORWARD CHARACTERISTICS
10
100
Tj=1250C
10
Tj=250C
1.0
0.1
1.0
Tj=250C
0.01
0.1
0
20
40
60
80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
35
30
8.3ms Single Half Sine Wave
JEDEC Method
25
20
15
10
0
1
2
5
10
20
NUMBER OF CYCLES AT 60Hz
50
100
0.001
.2
.4
.6
.8
1.0
FORWARD VOLTAGE. (V)
1.2 1.4
FIG.6- TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
20
HHDDBB110016GG~~HHDDBB110057GG
Tj=250C
10
0
.1
.5 1 2
5 10 20 50 100 200 500
REVERSE VOLTAGE. (V)
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