SIHFU120-E3(2008) データシートの表示（PDF） - Vishay Semiconductors
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SIHFU120-E3 Datasheet PDF : 8 Pages
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IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, RG = 25 Ω, IAS = 7.7 A (see fig. 12).
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 55 to + 150
260d
UNIT
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
ΔVDS/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.6 Ab
VDS = 50 V, ID = 4.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = 50 V, ID = 9.2 A,
RG = 18 Ω, RD = 5.2 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
MAX.
110
50
3.0
UNIT
°C/W
MIN. TYP. MAX. UNIT
100
-
-
V
-
0.13
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.27
Ω
1.6
-
-
S
-
360
-
-
150
-
pF
-
34
-
-
-
16
-
-
4.4
nC
-
-
7.7
-
6.8
-
-
27
-
ns
-
18
-
-
17
-
-
4.5
-
nH
-
7.5
-
www.vishay.com
2
Document Number: 91266
S-Pending-Rev. A, 21-Jul-08
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