FMMT591(2007) データシートの表示（PDF） - Diodes Incorporated.

部品番号

コンポーネント説明

メーカー

FMMT591
(Rev.:2007)

Medium power PNP transistor in SOT23

Diodes Incorporated. 

FMMT591

Electrical characteristics (at Tamb = 25°C unless otherwise stated).

Parameter

Symbol

Collector-base breakdown BVCBO

voltage

Collector-emitter

breakdown voltage

BVCEO

Emitter-base breakdown BVEBO

voltage

Collector cut-off current ICBO

Collector – emitter current ICES

cut-off current

Emitter cut-off current

IEBO

Collector-emitter

saturation voltage

VCE(sat)

Min.

-80

-60

-7

Base-emitter saturation

voltage

VBE(sat)

Base-emitter turn-on

voltage

VBE(on)

Static forward current

hFE

100

transfer ratio

100

80

15

Transition frequency

fT

150

Typ. Max.

-8.1

<1 -100

<1 -100

<1

-155

-295

965

-100

-180

-350

-1200

830 -1000

220

175 300

155

40

Output capacitance

COBO

10

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

Unit Conditions

V IC = -100␮A

V IC = -10mA (*)

V IE = -100␮A

nA VCB = -60V

nA

nA VEB = -5.6V

mV IC = -0.5A, IB = -50mA(*)

mV IC = -1A, IB = -100mA(*)

mV IC = -1A, IB = -100mA(*)

mV IC = -1A, VCE = -5V(*)

MHz

pF

IC = -1mA, VCE = -5V(*)

IC = -500mA, VCE = -5V(*)

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

IC = -50mA, VCE = -10V

f = 100MHz

VCB = -10V, f = 1MHz(*)

Issue 4 - September 2007

4

© Zetex Semiconductors plc 2007

www.zetex.com

Share Link: