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BD239 データシートの表示(PDF) - Comset Semiconductors

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BD239 Datasheet PDF : 3 Pages
1 2 3
NPN BD239 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD240, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage (RBE = 100 )
VCBO
Collector-Base Voltage
VEBO
IC
IB
PT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
THERMAL CHARACTERISTICS
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
Value
45
60
80
100
55
70
90
115
45
60
80
100
5.0
3
7
0.5
30
30
150
-65 to +150
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
70
4.17
Unit
V
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
22/10/2012
COMSET SEMICONDUCTORS
1/3

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