BD239 データシートの表示（PDF） - Comset Semiconductors

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BD239

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

Comset Semiconductors 

NPN BD239 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VCE=30 V

BD239

-

-

ICEO

Collector Cutoff Current

VCE=30 V

VCE=60 V

BD239A -

BD239B -

-

-

0.3 mA

VCE=60 V

BD239C -

-

BD239

-

-

IEBO

Emitter Cutoff Current

VBE=5 V

BD239A -

BD239B -

-

-

1.0 mA

BD239C -

-

VCE=45 V

BD239

-

-

ICES

Collector Cutoff Current

(VBE = 0)

VCE=60 V

VCE=80 V

BD239A -

BD239B -

-

-

0.2 mA

VCE=100 V

BD239C -

-

VCEO(sus)

Collector-Emitter

Sustaining Voltage (IB = 0) IC =30mA

(*)

BD239 45

BD239A 60

BD239B 80

V

BD239C 100

BD239

VCE=4 V

IC=0.2 A

BD239A

BD239B

40

-

-

hFE

DC Current Gain (*)

BD239C

BD239

-

VCE=4 V

IC=1 A

BD239A

BD239B

15

-

-

BD239C

VCE(SAT)

Collector-Emitter saturation IC=1 A

Voltage (*)

IB=200 mA

BD239

BD239A

BD239B

-

- 0.6 V

BD239C

BD239

VBE(on)

Base-Emitter Voltage (*)

VCE=4 V

IC=1 A

BD239A

BD239B

-

- 1.3 V

BD239C

VCE=10 V

IC=0.2 A

f = 1KHz

hfe

Small Signal Current Gain

VCE=10 V

IC=0.2 A

f = 1MHz

BD239

BD239A

BD239B

20

-

-

BD239C

BD239

BD239A

BD239B

3

-

-

-

BD239C

fT

Transistor frequency

VCE=10 V, IC=0.2 A, f = 1MHz 3

-

- MHz

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

22/10/2012

COMSET SEMICONDUCTORS

2/3

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