BD132 データシートの表示（PDF） - New Jersey Semiconductor

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BD132

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376*2922

(212)227-6005

FAX: (973) 376-8960

PNP BD132

NPNBD131

SILICON PLANAR EPITAXIAL POWER

TRANSISTORS

The BD132are PNN transistors mounted in Jedec TO-126 plastic package.

Medium power applications.

NPN complements are BD131 .

ABSOLUTE MAXIMUM RATINGS

Symbol

-VCEO

-VCBO

-VEBO

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Value

Unit

45

V

45

V

4

V

Symbol

ilc

iIB

PT

Ratings

Base current (peak value)

Reverse base current (peak value)

Total power Dissipation

-Ir

-low

-IBM

+|BM

; @ Tmb = 60°C

Value

3

6

0.5

0.5

15

Unit

Watts

Tj

Junction Temperature

Tstg

Storage Temperature

150

°C

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

RthJ-mb

Ratings

Thermal Resistance, Junction to mouting base

Value

Unit

6

KM/

NJ Semi-Conductors reserves the right to change test conditions, parameterlimits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customersto verify that datasheetsare current before placing orders.

Quality Semi-Conductors

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