BD132 データシートの表示（PDF） - New Jersey Semiconductor

部品番号

コンポーネント説明

メーカー

BD132

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

New Jersey Semiconductor 

PNP BD132

NPNBD131

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

-IiCBO

-'EBO

-VcE(SAT)

•VBE<SAT)

HFE

Emitter cut-offcurrent

IE=0 , -VCB=40 V

|E=0,-VCB=40V,Ti= 150°C

|c=0, -VEB=3 V

Collector-Emitter saturation ; -lc=0.5 A, -IB=50 mA

Voltage

-lc=2.0 A, -IB=200 mA

Base-Emitter saturation \c=0.5 A, -IB=50 mA

Voltage

-lc=2.0 A, -IB=200 mA

DC Current Gain

i ^I^J^ *

Min Typ MX Unit

-

-

-

-

5

500

1|J1AA

- - 5 MA

; - 0.3

1.2

V

-

- 0.7

1,5

V

40 -

20

_

DIMENSIONS

MECHANICAL DATA CASE TO-126

mm

inches

min

max

min

max

A

7.4

7.8

0.295 0.307

B 10.5

10.8 0.413 0.425

C

2.4

2.7

0.094 0.106

D

0.7

0.9

0.027 0.035

E

2.2 typ.

0.087 typ.

F

0.49

0.75 0.019 0.029

G

4.4 typ.

0.173 typ.

H

2.54 typ.

0.1 00 typ.

L

15.7 typ.

0.618 typ.

M

1.2 typ.

0.047 typ.

N

3.8 typ.

0.1 49 typ.

P

3.0

3.2 0.118 0.126

n •*

Pin 1 :

Pin 2:

Case :

Emitter

Collector

Base

Share Link: