BFG590 データシートの表示（PDF） - Philips Electronics
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BFG590 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
BFG590
BFG590/X
CODE
N38
N44
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG590
BFG590/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
|S21|2
insertion power gain
CONDITIONS
open emitter
open base
Ts ≤ 60 °C
IC = 35 mA; VCE = 8 V
IC = 0; VCE = 8 V; f = 1 MHz
IC = 80 mA; VCE = 4 V; f = 1 GHz
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
MIN.
−
−
−
−
50
−
−
−
−
TYP.
−
−
−
−
90
0.7
5
13
11
MAX. UNIT
20
V
15
V
200 mA
400 mW
280
−
pF
−
GHz
−
dB
−
dB
1998 Oct 02
2
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