Philips Semiconductors
High-speed double diode
Product specification
1PS181
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode (k1)
cathode (k2)
common anode
2
1
3
Top view
2
1
3
MAM082
Marking code: A3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge
t = 1 µs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
85 V
−
80 V
−
215 mA
−
125 mA
−
500 mA
−
4A
−
0.5 A
−
250 mW
−65 +150 °C
−
150 °C
1996 Sep 03
2