2SB1424 データシートの表示（PDF） - Galaxy Semi-Conductor

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2SB1424

Low VCE(sat) Transistor(-20V,-3A)

Galaxy Semi-Conductor 

Production specification

Low VCE(sat) Transistor(-20V,-3A)

2SB1424

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-50μA IE=0

-20

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO IE=-50μA IC=0

-6

V

Collector cut-off current

ICBO

VCB=-20V IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1 μA

DC current gain

hFE

VCE=-2V IC=-0.1A

120

390

Collector-emitter saturation voltage VCE(sat) IC=-2A IB=-0.1A

Transition frequency

fT

VCE=-2V,IC=-0.5A,

f=100MHz

Output Capacitance

Cobo

VCB=-10V f=1MHz IE=0

-

-0.5 V

240

MHz

35

pF

CLASSIFICATION HFE

Rank

Range

Marking

Q

120-270

AEQ

R

180-390

AER

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E035

Rev.A

www.gmicroelec.com

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