BPV11F(1999) データシートの表示（PDF） - Vishay Semiconductors
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BPV11F Datasheet PDF : 6 Pages
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Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T–1¾ plastic package.
y The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (l p 900nm).
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
Features
12784
D Very high radiant sensitivity
D Standard T–1¾ (ø 5 mm) package
D IR filter for GaAs emitters (950 nm)
D Angle of half sensitivity ϕ = ± 15°
D Base terminal available
Applications
Detector for industrial electronic circuitry, measurement and control
BPV11F
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x tp/T = 0.5, tp 10 ms
x Tamb 47 °C
xt 5 s, 2 mm from body
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
80
70
5
50
100
150
100
–55...+100
260
350
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81505
Rev. 3, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
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