BPV11F(1999) データシートの表示（PDF） - Vishay Semiconductors
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BPV11F Datasheet PDF : 6 Pages
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BPV11F
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown IC = 1 mA
V(BR)CE 70
V
Voltage
O
Collector Dark Current
VCE = 10 V, E = 0
ICEO
1
50 nA
DC Current Gain
VCE = 5 V, IC = 5 mA, E = 0 hFE
450
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E=0 CCEO
15
pF
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E=0 CCBO
19
pF
Collector Light Current
Ee=1 mW/cm2, l=950 nm,
Ica
3
9
mA
VCE=5 V
Angle of Half Sensitivity
ϕ
±15
deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Ee=1 mW/cm2, l=950 nm,
IC=1 mA
W VS=5 V, IC=5 mA,
RL=100
W VS=5 V, IC=5 mA,
RL=100
W VS=5 V, IC=5 mA,
RL=100
lp
l0.5
VCEsat
ton
toff
fc
930
nm
900...980
nm
130
300 mV
6
ms
5
ms
110
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
200
104
160
120
RthJA
80
40
103
VCE = 10V
102
101
0
0
94 8300
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8249
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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2 (6)
Document Number 81505
Rev. 3, 20-May-99
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