MCR218-4 データシートの表示（PDF） - New Jersey Semiconductor
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MCR218-4 Datasheet PDF : 2 Pages
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MCR218 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Rejc
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) Tj = 25°C
Tj = 125°C
Symbol
IDRM, IRRM
Win
Typ
Max
Unit
_
—
10
HA
2
mA
Peak On-State Voltage(1 )
(lTM = 16APeak)
VTM
—
1.5
1.8
Volts
Gate Trigger Current (Continuous dc)
(Vo = 12V, RL = 100 Ohms)
IGT
—
10
25
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12V, RL = 100 Ohms)
(Rated VDRM, «L = 1000Ohms, Tj = 125"C)
Holding Current
(Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A,
0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)
Critical Rate-of-Rise of Off-State Voltage
(Vp = Rated VDRM, Exponential Waveform, Gate Open, Tj = 125°C)
VGT
IH
dv/dt
Volts
—
1.5
0.2
~
16
30
mA
—
100
—
V/us
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle € 2%.
FIGURE 1 — CURRENT DERATING
UJ
o:
1
CL
UJ
I
<
s=>
I
1
2
3
4
5
6
7
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
FIGURE 2 — ON-STATE POWER DISSIPATION
FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I-T(AV).AVG' ON-STATE CURRENT (AMPS)
2.0
1.5
X s.
X
\/.D = 12Vdc
1.0
0.9
\.
^
X,
0.7
^^
^^^X
0.5
^
0.4
^'X
03
-60 -40 -20 0 20 40 60 80 100 120 140
Tj, JUNCTION TEMPERATURE ( C)
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