BAS40-06LT1G(2011) データシートの表示（PDF） - ON Semiconductor

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BAS40-06LT1G
(Rev.:2011)

Common Anode Schottky Barrier Diodes

ON Semiconductor 

BAS40−06LT1G, SBAS40−06LT1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

40

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

CT

−

Reverse Leakage

(VR = 25 V)

IR

−

Forward Voltage

(IF = 1.0 mAdc)

VF

−

Forward Voltage

(IF = 10 mAdc)

VF

−

Forward Voltage

(IF = 40 mAdc)

VF

−

Max

Unit

V

−

pF

5.0

mAdc

1.0

mVdc

380

mVdc

500

Vdc

1.0

100

10

150C

1.0 1 25C

85C

25C

0.1

0

0.1 0.2

- 40C - 55C

0.3 0.4 0.5 0.6 0.7 0.8

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

100

TA = 150C

125C

10

1.0 85C

0.1

0.01 25C

0.001

0

5.0

10

15

20

25

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

0 5.0 10 15 20 25 30 35 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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