BAS40-06LT1 データシートの表示（PDF） - ON Semiconductor

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BAS40-06LT1

Common Anode Schottky Barrier Diodes

ON Semiconductor 

BAS40−06LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(IR = 10 mA)

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage

(VR = 25 V)

Forward Voltage

(IF = 1.0 mAdc)

Forward Voltage

(IF = 10 mAdc)

Forward Voltage

(IF = 40 mAdc)

Symbol

V(BR)R

CT

IR

VF

VF

VF

Min

Max Unit

40

−

V

−

5.0

pF

−

1.0

mAdc

−

380 mVdc

−

500 mVdc

−

1.0

Vdc

100

10

150°C

1.0 125 °C

85°C

25°C

0.1

0

0.1 0.2

−40°C −55°C

0.3 0.4 0.5 0.6 0.7 0.8

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

100

TA = 150°C

10 125°C

1.0 85°C

0.1

0.01 25°C

0.001

0

5.0

10

15

20

25

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

0 5.0 10 15 20 25 30 35 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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