T2800 データシートの表示（PDF） - New Jersey Semiconductor
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T2800 Datasheet PDF : 2 Pages
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T2800 SERIES
ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted.)
Characteristic
Peak Blocking Current
(VD = Rated VDRM. Gate Open)
TC = 25°C
TC = 100°C
Peak On-State Voltage (Either Direction)*
(Ij = 30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, R|_ = 12 Ohms)
MT2(+), G(+) T2800
MT2(+), G(-) T2800
MT2(-), G(-) T2800
MT2(-), G(+) T2800
Symbol
'DRM
VTM
IGT
Gate Trigger Voltage (Continuous dc) (All Polarities)
(VD = 12 Vdc, RL = 100 Ohms)
(R|_ = 125 Ohms, VD = VDRM. TC = 100°C)
Holding Current (Either Direction)
(VD = 12 Vdc, Gate Open)
T2800
Gate Controlled Turn-On Time
(VD = Rated VDRM. IT = 10 A- 'GT = 80 mA, Rise Time = 0.1 us)
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM. 'T(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80"C)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM. Exponential Voltage Rise,
Gate Open, TC = 100 C)
T2800
B
D
M
*Pulse Test: Pulse Width s 300 us, Duty Cycle s 2%.
VGT
IH
<gt
dv/dt(c)
dv/dt
Min
Typ
Max
Unit
—
—
10
LiA
—
—
2
mA
—
1.7
2
Volts
mA
—
10
25
—
20
60
—
15
25
30
60
Volts
1.25
2.5
0.2
—
—
mA
15
30
—
1.6
—
us
—
10
—
V/LIS
100
—
—
—
60
—
V/us
—
—
—
STYLE 4:
PIN1.
2,
3
4
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14 5M, 1982.
2. CONTROLLING DIMENSION INCH
3 DIMENSION 2 DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN
A 0.570
B 0.380
C 0.160
MAX
0.620
0.405
0.190
0 0.025 0.035
F 0.142 3 K7
G 0.095 C 105
H 0110 0.155
J 0.014 0.022
K 0.500 0.562
L 0,045 0.055
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0255
U 0.000 0.050
V 0.045 —_
1 — 0.080
MILLIMETERS
MIN MAX
14.48 1575
966 1028
4.07 4.82
0.64 0.88
361 :•: n
242 2.66
280 393
S 3 r 0.55
1273 1427
1 15 1 39
4.83 5.33
2.54 304
2;,4 2.79
• 15 1.39
597 6.47
0.00 1.27
1.15
2.04
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