BC635, BC637, BC639, BC639–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mAdc, IB = 0)
BC635
BC637
BC639
V(BR)CEO
45
—
60
—
80
—
Collector–Emitter Zero–Gate Breakdown Voltage (1)
V(BR)CES
(IC = 100 mAdc, IB = 0)
BC639–16
120
—
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
BC635
BC637
BC639
V(BR)CBO
45
—
60
—
80
—
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (1)
ICBO
—
—
—
—
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
hFE
25
—
BC635
40
—
BC637
40
—
BC639
40
—
BC639–16ZLT1
100
—
25
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
—
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
—
200
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
50
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
Max
Unit
Vdc
—
—
—
Vdc
—
Vdc
—
—
—
—
Vdc
100
nAdc
10
µAdc
—
—
250
160
160
250
—
0.5
Vdc
1.0
Vdc
—
MHz
—
pF
—
pF
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