BU208D データシートの表示（PDF） - Inchange Semiconductor
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BU208D Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU208D
DESCRIPTION
·High Voltage-VCES= 1500V(Min.)
·Collector Current- IC = 8.0A
·Built-in Damper Diode
APPLICATIONS
·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VCEO Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
8.0
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
15
A
150
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn
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