BU406TU(2013) データシートの表示（PDF） - Fairchild Semiconductor

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BU406TU
(Rev.:2013)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

Parameter

ICES Collector Cut-Off Current

IEBO

VCE(sat)

VBE(sat)

fT

tOFF

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Turn-Off Time

Test Condition

VCE = 400 V, VBE = 0

VCE = 250 V, VBE = 0

VCE = 250 V, VBE = 0

at TC = 150°C

VBE = 6 V, IC = 0

IC = 5 A, IB = 0.5 A

IC = 5 A, IB = 0.5 A

VCE = 10 V, IC = 0.5 A

IC = 5 A, IB = 0.5 A

Min.

10

Max.

5

100

1

1

1

1.2

0.75

Units

mA

μA

mA

mA

V

V

MHz

μs

© 2000 Fairchild Semiconductor Corporation

BU406 Rev. 1.2.1

2

www.fairchildsemi.com

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