RBO08-40T(2003) データシートの表示（PDF） - STMicroelectronics
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RBO08-40T Datasheet PDF : 9 Pages
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RBO08-40G / RBO08-40T
Symbol
Parameter
VRM31/VRM32
VBR31/VBR32
IR31/IR32
VCL31/VCL32
VF13
IPP
αT
C31/C32
Stand-off voltage Transil T1 / Transil T2.
Breakdown voltage Transil T1 / Transil T2.
Leakage current Transil T1 / Transil T2.
Clamping voltage Transil T1 / Transil T2.
Forward voltage drop Diode D1.
Peak pulse current.
Temperature coefficient of VBR.
Capacitance Transil T1 / Transil T2.
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)
Symbol
Test Conditions
Min.
VF 13
IF = 8 A
RBO08-40G
IF = 8 A @ Tamb = 25°C
RBO08-40T
VF 13
IF = 4 A
RBO08-40G
IF = 4 A @ Tamb = 25°C
RBO08-40T
VF 13
IF = 1 A
IF = 1 A @ Tamb = 25°C
IF = 1 A @ Tj = 85°C
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Value
Typ.
Max.
1.5
1.7
1.45
1.3
1.35
1.2
1.1
1.0
0.9
Unit
V
V
V
V
V
V
V
V
V
Symbol
VBR 31
VBR 31
IRM 31
IRM 31
VCL 31
αT
C 31
Test Conditions
IR = 1 mA
IR = 1 mA, Tamb = 25°C
VRM = 20 V
VRM = 20 V, Tamb = 25°C
IPP = 15A, Tj initial = 25°C
Temperature coefficient of VBR
F = 1MHz VR = 0 V
10/1000µs
Min.
22
24
Value
Typ.
1000
Max.
35
32
50
10
40
9
Unit
V
V
µA
µA
V
10-4/°C
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)
Symbol
VBR 32
VBR 32
IRM 32
IRM 32
VCL 32
αT
Test Conditions
IR = 1 mA
IR = 1 mA, Tamb = 25°C
VRM = 20 V
VRM = 20 V, Tamb = 25°C
IPP = 37.5 A
Temperature coefficient of VBR
10/1000µs
Min.
22
24
Value
Typ.
Max.
35
32
50
10
40
8.5
Unit
V
V
µA
µA
V
10-4/⊃
C
3/9
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