RBO08-40T(2003) データシートの表示（PDF） - STMicroelectronics

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RBO08-40T
(Rev.:2003)

REVERSED BATTERY AND OVERVOLTAGE PROTECTION

STMicroelectronics 

RBO08-40G / RBO08-40T

Fig. 1 : Peak pulse power versus exponential

pulse duration (Tj initial = 85°C).

Pp p (kW)

10.0

5.0

2.0

1.0

0.5

0.2

0.1

1

Diode D1

2

5

Transil T2

tp(ms)

10 20

50 100

Fig. 2-1 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 40 ms and tp = 1 ms

(TRANSIL T2).

VCL (V)

45

40

35

30

25

0.1 0.2

tp = 40ms

tp = 1ms

Ipp(A)

0.5 1.0 2.0

5.0 10.0 20.0 50.0

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 1 ms and tp = 20 µs

(TRANSIL T1).

VCL (V)

50

45

40

35

30

25

0.1 0.2

tp = 1ms

tp = 20µs

Ipp(A)

0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0

Fig. 3 : Relative variation of peak pulse power

versus junction temperature.

Ppp[Tj]/Ppp[Tj initial=85°C]

1.20

1.00

0.80

0.60

0.40

0.20

0.00

0

Tj initial (°C)

25 50 75 100 125 150 175

6/9

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