RBO08-40T(2003) データシートの表示（PDF） - STMicroelectronics

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RBO08-40T
(Rev.:2003)

REVERSED BATTERY AND OVERVOLTAGE PROTECTION

STMicroelectronics 

RBO08-40G / RBO08-40T

Fig. 4 : Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.5

0.2

0.1

1E-3

1E-2

tp (s)

1E-1

1E+0

1E+1

Fig. 5-1 : Peak forward voltage drop versus peak

forward current (typical values) - (TRANSIL T2).

VFM(V)

2.0

1.8

1.6

1.4

1.2

1.0

Tj=25°C

0.8

0.6

0.4

Tj=150°C

0.2

0.0

0.1

IFM (A)

1.0

10.0 20.0

Fig. 5-2 : Peak forward voltage drop versus peak

forward current (typical values) - (DIODE D1).

VFM(V)

1.6

1.4

1.2

1.0

Tj=25°C

0.8

0.6

0.4

Tj=150°C

0.2

0.0

0.1

IFM (A)

1.0

10.0 20.0

Fig. 6 : Relative variation of leakage current

versus junction temperature.

ORDERING INFORMATION

RBO 08 - 40 G

Reverse Battery &

Overvoltage Protection

VCL = 40V

IF(AV) = 8A

Package:

G = D2PAK

T = TO-220AB

7/9

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