RBO08-40G データシートの表示（PDF） - STMicroelectronics

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RBO08-40G

REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT(RBO)

STMicroelectronics 

RBO08-40G / RBO08-40M / RBO08-40T

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

IFSM

Non repetitive surge peak forward current

(Diode D1)

tp = 10 ms

IF

DC forward current (Diode D1)

Tc = 75°C

PPP

Peak pulse power between Input and Output 10/1000 µs

(Transil T1) see note 1 Tj initial = 25°C

PPP

Peak pulse power between Pins 3 and 2 (10/1000µs)

Tstg

Storage temperature range

Tj

Maximum junction temperature

TL

Maximum lead temperature for soldering during 10 s

at 4.5mm from case for TO220AB

Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit..

TM : PowerSO-10, TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics.

Value

80

8

600

1500

- 40 to + 150

150

260

Unit

A

A

W

W

°C

°C

THERMAL RESISTANCE

Symbol

Rth (j-c)

Junction to case

Parameter

RBO08-40M

RBO08-40G

RBO08-40T

Value

2.4

2.4

2.4

Unit

°C/W

D1

1

T1

3 I13

IF

2 T2

VCL31 VBR31 VR M31

VF13

IRM 31

IR 31

V13

Ipp31

I32

Ipp32

IR 32

IR M32

V32

VRM 32 VBR 32 VC L32

1

3

2

2/14

®

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