isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD2955
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ;IB= -3.3A
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -10V
MIN MAX UNIT
-60
V
-1.0
V
-8.0
V
-1.8
V
-50
uA
-0.02
mA
-0.5
mA
20
100
5
2.0
MHz
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